• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Sep 2, 2026 · PGR2025-00021 · APJ Kimberly Mcgraw · PGR · Final written decision

  Claims 1, 3–7, and 12–20 are unpatentable: the Board found the asserted Kim, Kim–Yang, Lee, and Lee–Haller obviousness grounds proved, but not Lee–Park.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “(e.g., an advanced degree may substitute for professional experience).” Pet. 21 (citing Ex. 1003 ¶¶ 36–37). Petitioner further contends that a “POSITA would also have been aware of and generally knowledgeable about 3D memory’s structure, its component parts, and how it operates.” Id. Patent Owner does not dispute Petitioner’s definition of a POSITA. PO Resp. 9. Based on our review of the complete record, we adopt Petitioner’s uncontested definition of a POSITA.” slip op. at 6

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITAPlain and ordinary meaningDecided for petitioner

    “The plain language of claim element [1.A] recites “wherein the first material layer is disposed over a first portion of the second material layer;” and claim element [1.B] recites “a landing pad disposed over a second portion of the second material layer.” Thus, the plain language of the claim merely recites that the first material layer is disposed over a first potion of the second material layer and the landing pad is disposed over a second portion of the second material layer. The plain language does not define what constitutes the first or second portions of the second material layer or define the first or second portions of the material layer by what is disposed above the layers. We agree with Petitioner that the term “portion” has a straightforward plain and ordinary meaning: a “part” of a larger whole. Pet. 5 (citing Ex. 1077, 406 (defining “portion” as “a part of a whole”)). The ’838 patent itself repeatedly uses the term “portion” this way. Ex. 1001, 5:40–43 (discussing both “an upper portion” and “lower portion” of a “staircase”), 5:66–6:1 (referencing “a portion of a top surface of a layer”); see also 4:39– 40, 7:15–17, 8:20–33, 8:34–65, 11:60–64, 12:38–59. Thus, we understand that the first and second portions of the second material layer are portions of (i.e., a part of the whole) second material layer. Neither the claims nor the Specification define what can constitute a first portion or a second portion of a second material layer.” slip op. at 11

  • Expert testimonyPatent owner expert creditedPetitioner expert discountedDecided for patent owner

    “Dr. Giapis, argues Petitioner’s proposed modification of Lee requires a POSITA to (1) start with an oxide-based insulating layer 22 as shown in Figure 5B of Lee, (2) introduce an oxidant gas into the adjacent openings, and (3) oxidize a surface that is already oxide-based to form a curved surface. PO Resp. 78–81. Patent Owner provides credible evidence supporting its argument that a POSITA would not have been motivated to make these changes to Lee, as they are technically infeasible. Id. at 79 (citing Ex. 2019 ¶¶ 191–208). Dr. Giapis credibly explains that in Park’s process, an oxygen gas would be used to oxidize the silicon nitride or polysilicon, but “introducing such an oxidant into the openings of Lee’s structure above will not promote further oxidation to the existing oxide the relevant region . . . so nothing remains to be oxidized.” Ex. 2019 ¶¶ 192–193. We credit Dr. Giapis testimony that “[i]t is not possible to further oxidize a solid oxide material with oxygen gas as in Park. That is why Park’s thermal oxidation process is performed on silicon nitride or polysilicon, which are not oxides to begin with but they can be oxidized to form silicon dioxide.” Id. ¶ 193 (citing Ex. 2028 (Plummer) at 345–350). According to Dr. Giapis, a POSITA would have understood this and not expected the combination of Lee and Park to achieve any change in shape or any rounding in Lee’s Figure 5B. Ex. 2019 ¶ 193.” slip op. at 60

  • Obviousness (§103) › Motivation to combine / reasonable expectation of successMotivation not foundReasonable expectation not foundNot shown unpatentable

    “Patent Owner, however, with persuasive supporting testimony from Dr. Giapis, argues Petitioner’s proposed modification of Lee requires a POSITA to (1) start with an oxide-based insulating layer 22 as shown in Figure 5B of Lee, (2) introduce an oxidant gas into the adjacent openings, and (3) oxidize a surface that is already oxide-based to form a curved surface. PO Resp. 78–81. Patent Owner provides credible evidence supporting its argument that a POSITA would not have been motivated to make these changes to Lee, as they are technically infeasible. Id. at 79 (citing Ex. 2019 ¶¶ 191–208). Dr. Giapis credibly explains that in Park’s process, an oxygen gas would be used to oxidize the silicon nitride or polysilicon, but “introducing such an oxidant into the openings of Lee’s structure above will not promote further oxidation to the existing oxide the relevant region . . . so nothing remains to be oxidized.” Ex. 2019 ¶¶ 192–193. We credit Dr. Giapis testimony that “[i]t is not possible to further oxidize a solid oxide material with oxygen gas as in Park. That is why Park’s thermal oxidation process is performed on silicon nitride or polysilicon, which are not oxides to begin with but they can be oxidized to form silicon dioxide.” Id. ¶ 193 (citing Ex. 2028 (Plummer) at 345–350). According to Dr. Giapis, a POSITA would have understood this and not expected the combination of Lee and Park to achieve any change in shape or any rounding in Lee’s Figure 5B. Ex. 2019 ¶ 193.” slip op. at 60

  Patent outcomesUS 12,010,838 unpatentable
  Claim construction§ 103 obviousnesscites Phillips
  Patents in suitUS 12,010,838
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Jul 20, 2026 · IPR2025-00228 · APJ Michael T Cygan · IPR · Final written decision

  Claims 1–18 are unpatentable: claims 1, 2, 4, 5, and 9–18 as obvious over Kim; claims 1–18 over Kim and Fang; claims 1–15 over Han and Fang; and claims 17–18 over Han, Fang, and Chen.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “B. Level of Ordinary Skill in the Art Petitioner asserts that a person of ordinary skill in the art (“POSITA”) at the critical time “would have had a bachelor of science degree in electrical engineering or a similar discipline, along with 2-3 years of professional experience working with (e.g., researching, designing, or teaching) monolithic 3D structures and NAND flash memory devices, or an equivalent level of skill, knowledge, and experience (e.g., an advanced degree may replace some of the professional experience).” Pet. 26 (citing Ex. 1003 ¶42). Petitioner further asserts that a POSITA “would have been aware of and generally knowledgeable about 3D NAND’s structure, how it is manufactured, and its component parts.” Id. Patent Owner does not dispute this assessment. PO Resp. 7–8. For purposes of this Decision, we adopt Petitioner’s proposed level of ordinary skill, as it appears to be consistent with the specification of the ’276 patent and the prior art of record.” slip op. at 6

  • Expert testimonyPatent owner expert creditedDecided for patent owner

    “Dr. Campbell has a Ph.D. in physics, supplying the advanced degree that Petitioner’s definition of a person having ordinary skill in the art accepts as a replacement for some experience. Ex. 2006 ¶ 2. Dr. Campbell has significant experience in semiconductor technology, including in process technologies for submicron CMOS, years of research in semiconductor processing, materials, and device structures, and authored “[t]he leading textbook on semiconductor technology.” Id. ¶¶ 2–4. Dr. Campbell qualifies as a person of ordinary skill in the art under the parties’ agreed definition.” slip op. at 7

  • Claim Construction › Threshold & procedure › Whether a term needs construction (O2 Micro)No construction neededOther

    “Patent Owner proposed that the terms “exposing portions” and “etching the exposed portions” require two different steps performed in that order. PO Resp. 7–10. Petitioner does not contest this characterization. Pet. Reply 1– 2. Patent Owner also proposes that this requires the exposure step not to perform any etching of the newly exposed layer. PO Resp. 10–12 (citing Ex. 1001, 10:2–5, 10:15–17 (stating that the etch-stop layer “protects the underlying structure until all the VIA openings 640 are formed” and that it “[t]he essence of an etch-stop layer dictates that contact-hole etching stops or slows down upon contact, i.e., exposing without penetrating it.” Pet. Reply 11. Based on the record before us, we determine that no claim term requires express construction for purposes of this Decision.” slip op. at 7

  • Obviousness (§103) › Motivation to combine / reasonable expectation of successMotivation foundReasonable expectation foundUnpatentable

    “described in earlier embodiments would not be consistent with Kim’s statement that previously described elements are “omitted” in the Figures 17A to 22B section “for concise description.” As admitted by Patent Owner, it would be a “reasonable inference” that materials described in a first embodiment for a particular hypothetical layer L would also be used for that layer L in later embodiments absent an express statement to the contrary “because you have just omitted that sort of duplicative description.” Tr. 37:9–38:12. Kim’s Figures 17A–22B do not further address the underlying staircase structure that was detailed in the descriptions of the Figures 4–15 embodiments. Thus, it would similarly be a “reasonable inference” that aspects of the stack structure would be understood to apply to the same stack in the embodiments of Figures 17A–22B, which rely upon, in unaltered form, the earlier-described elements of the stack. stack on bottom, they “replace” and “exclude” any prior description of a gate-stack-on-top. PO Resp. 18–19 (citing Ex. 2019 ¶¶ 40–41; Ex. 1005 ¶¶ 185–187 (describing the etch-stop layer as covering the sacrificial layers only at their end portions)). However, as admitted by Patent Owner, all of Kim’s Figures show only a gate-stack-on-bottom structure. Tr. 41:6–7 (“For the first embodiment, it is true that figures show the gate stack on bottom.”). The fact that Kim’s Figures 17A–22B, which add etch-stop and barrier layers to the gate stack, are shown only as gate stack on bottom is merely consistent with the uniform use of gate-stack-on-bottom in Kim’s Figures, which show the layer-by-layer construction of its device. Like Figures 4–15, Figures 17A–22B exemplify rather than limit the description of the previously described memory stack, and do not exclude the gate-stack-onbottom description of the memory stack. Kim can be used for all it realistically teaches, including descriptions in its disclosure that are not represented by specific Figures. See In re Chapman, 357 F.2d 418, 424 (C.C.P.A. 1966) (stating that a reference “is not limited to the disclosures in its specific illustrative examples.”). Accordingly, the record supports Petitioner’s assertion that Kim’s teaching of a gate-stack-on-top alternative for the memory stack would be understood by a POSITA as a memory stack option applicable to its other embodiments having that same memory stack.” slip op. at 11

  Patent outcomesUS 11,101,276 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 11,101,276
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Jun 9, 2026 · IPR2025-00189 · APJ Jo-Anne M Kokoski · IPR · Final written decision

  Claim 19 is unpatentable as obvious over Kim and over Nam; the challenge based on Lee and Park fails for lack of a reasonable expectation of success.

  RulingsFinal written decision

  • Adverse judgmentAdverse judgmentOther

    “B. Patent Owner’s Disclaimer of Claims 17 and 20 As indicated above, Patent Owner filed a statutory disclaimer of claims 17 and 20 of the ’666 patent. See Ex. 2005. In view of Patent Owner’s statutory disclaimer, we treat claims 17 and 20 as having never been part of the ’666 patent. See Vectra Fitness, Inc. v. TNWK Corp., ‘considered as part of the original patent’ in [35 U.S.C.] § 253 to mean that the patent is treated as though the disclaimed claims never existed.”). Because inter partes review cannot be instituted based on disclaimed claims, we do not consider claims 17 and 20 to be within the scope of this proceeding. 37 C.F.R. § 42.107(e) (“No inter partes review will be instituted based on disclaimed claims.”); General Elec. Co. v. United Techs. Corp., IPR2017-00491, Paper 9 (PTAB July 6, 2017) (precedential) (denying institution in view of a statutory disclaimer of all the challenged claims). Thus, we confine our analysis in this Decision to claim 19, the challenged claim that has not been disclaimed.” slip op. at 2

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “(“POSITA”) “would have had a bachelor’s degree in electrical engineering or a similar discipline, along with 2–3 years of professional experience working with (e.g., researching, designing, or teaching) 3D memory devices, or an equivalent level of skill, knowledge and experience (e.g., an advanced degree may substitute for professional experience).” Pet. 24–25 (citing Ex. 1003 ¶¶ 34–37). Petitioner further contends that the “POSITA would also have been aware of and generally knowledgeable about 3D memory’s structure, its component parts, and how it operates.” Id. at 25 (citing Ex. 1003 ¶¶ 34–37).” slip op. at 6

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITATerm construed board ownDecided for petitioner

    “evidence from the complete record now before us, we determine that the claim term “curved side surface” encompasses any outer surface of the structure with curvature. See Hamilton Beach Brands, Inc. v. F’real Foods, LLC, 908 F.3d 1328, 1338–1339 (Fed. Cir. 2018) (finding that it is acceptable for the Board to adopt its own claim construction where the parties “had notice of the contested claim construction and an opportunity to be heard”). We do not adopt Patent Owner’s position that “curved side surface” requires the side surface to be curved along a direction perpendicular to the top surface of the structure (e.g., the z-axis).” slip op. at 12

  • Obviousness (§103) › Graham factors (scope of art, differences, level of skill)UnpatentableUnpatentable

    “curved side surface” are premised on its proposed claim construction which, as set forth above, we decline to adopt. Instead, we determined that “curved side surface” as used in the challenged claim encompasses any outer surface of the structure with curvature, which does not need to be curved in any specific direction. See § II.B.1, supra. Kim states: Embodiments of the inventive concepts in which the protrusion pad PAD_P has a rectangular parallel[] shape is illustrated, but the protrusion pad PAD_P is not limited thereto and, in some embodiments, may have a shape including a curved surface based on a virtual rectangular parallel[] shape, a cylindrical shape, or any shape. Ex. 1005, 8:29–34 (emphases added). Dr. Lee testifies that “[a] POSITA would have recognized that this includes configurations where the sides of the protrusion pads are curved, particularly to optimize electrical connectivity and mitigate stress at material interfaces.” Ex. 1003 ¶ 201. Dr. Lee further testifies that a POSITA would have understood Kim’s disclosure “teaches a variety of different protrusion pad PAD_P shapes” including “pads with curved sides when viewed in cross-section or pads with curved sides when viewed from above.” Id. ¶ 202. Accordingly, we determine that Kim discloses a cylindrically-shaped PAD_P that has a “curved side surface” as required by the challenged claim. slip op. at 24

  Patent outcomesUS 11,145,666 unpatentable
  Claim construction§ 103 obviousnesscites Phillips
  Patents in suitUS 11,145,666
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Jun 1, 2026 · IPR2025-00117 · APJ Michael T Cygan · IPR · Final written decision

  Claims 1–19 are unpatentable: claims 1–9, 11–16, 18, and 19 as obvious over Kim; claims 10 and 17 as obvious over Kim and Fang, Park, and Park and Fang.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “at the critical time “would have had a bachelor of science degree in electrical engineering or a similar discipline, along with 2-3 years of professional experience working with (e.g., researching, designing, or teaching) monolithic 3D structures and NAND flash memory devices, or an equivalent level of skill, knowledge, and experience (e.g., an advanced degree may replace some of the professional experience).” Pet. 27 (citing Ex. 1003 ¶ 42). Petitioner further asserts that a POSITA “would have been aware of and generally knowledgeable about 3D NAND’s structure, its component parts, how it operates, and how it is controlled.” Id. Patent Owner does not dispute Petitioner’s definition. PO Resp. 7. We adopt Petitioner’s proposed 4 Neither party presents evidence or arguments regarding objective evidence of non-obviousness. Pet. 103; PO Resp. the ’711 patent and the prior art of record.” slip op. at 5

  • Claim Construction › Intrinsic evidence (Phillips canons) › Lexicography (patentee as own lexicographer)Term construed petitioner constructionDecided for petitioner

    “Based on the record before us, we agree with Petitioner that “on a surface” should be interpreted in line with the definition of “on” set forth in the ’711 patent. Ex. 1001, 4:1–6. We particularly note that the ’711 patent states that “‘on’ . . . should be interpreted in the broadest manner” and that “on” is not limited to “directly on.” Id. Instead, the ’711 patent states that “‘on’ also includes the meaning of ‘on’ something with an intermediate feature or layer therebetween.” Id. Patent Owner agrees that this definition controls the “standalone ‘on’” term such that A may be on B even if there is an intervening layer between them. Tr. 55:8–11 (“The standalone ‘on,’ we agree in the context of the patent, you can have intervening layers. I think the patent is clear about that.”). Claim 14 recites that the etch-stop layer is “on” something; i.e., “on a side surface and a top surface of each step.” Ex. 1001, 16:20–22. Patent Owner agrees that a surface is a “something.” Tr. 56:5–8 (“surface obviously is a something”). Substituting the “a “‘on’ something with an intermediate feature or layer therebetween” results in claim 14 reading as, “on a surface with an intermediate feature or layer therebetween.” Unlike “directly on,” which specifies the relation between two things, “a surface” may merely indicate the thing that something is “on,” particularly when “on” is “interpreted in the broadest manner” as expressly required by the ’711 patent.” slip op. at 7

  • Expert testimonyPatent owner expert discountedDecided for petitioner

    “Although Dr. Campbell testified in his deposition in response to Petitioner’s counsel that “on the surface” requires direct contact with the surface, his interpretation was based on “embodiments of” the patent rather than a general understanding of a person skilled in the art confronted with that term. Ex. 1027, 122:6–25, 124:6–23 (“I’m not sure if there are other sources for that, but it was on the ’711, so I’ve taken it there.”). Dr. Campbell, upon questioning from Patent Owner’s counsel, later stated that “an expert in semiconductor fabrication” would understand “on the surface” to mean “contact between one layer and another . . . with nothing in between.” Id. at 146:25–147:6. However, Dr. Campbell did not explain why such an interpretation is particular to the semiconductor fabrication art, or provide other explanation or support for this statement, which is in tension with the definition of “on” in the ’711 patent. Accordingly, we significantly discount the weight accorded to that statement. Phillips, 415 F.3d at 1318 (stating, “conclusory, unsupported assertions by experts as to the definition of a claim term are not useful to a court. Similarly, a court should discount any expert testimony ‘that is clearly at odds with the claim construction mandated by the claims themselves, the written description, and patent.’”). On balance, Dr. Campbell’s testimony is best understood as a description of certain Figures of the ’711 patent rather than a representation of an ordinarily skilled person’s understanding of the term “on the surface.” See Ex. 2009 ¶ 47 (describing Figs. 1, 3, and 4 as depicting layers in contact with the underlying layer or substrate). For example, Dr. Campbell describes Figure 9A as having a barrier layer “on and directly contacting the top and side surfaces of each step.” Id. ¶ 28 (emphasis added) (citing inter alia Ex. 1001, 7:6–67). Dr. Campbell does not explain why, beyond the fact that many Figures show layers as adjacent and in contact, a person of ordinary skill in the relevant art would understand those Figures to limit the claim language rather than illustrating particular embodiments that fall within a broader scope of claims 14 and 15. See Hill-Rom Servs., Inc. v. Stryker Corp., 755 F.3d 1367, 1371 (Fed. Cir. 2014) (“While we read claims in view of the specification, of which they are a part, we do not read limitations from the embodiments in the specifications into the claims.”).” slip op. at 9

  • Obviousness (§103) › Motivation to combine / reasonable expectation of successMotivation foundReasonable expectation foundUnpatentable

    “We agree with Petitioner that Kim’s first and second section are described as compatible, not mutually exclusive, embodiments. Kim’s second section builds further layers upon the structure of its first section, and states: In these embodiments, the same elements as in the embodiments previously described with reference to FIGS. 5A through 14A and FIGS. 5B through 14B will be denoted by the same reference numbers therein, and for concise description, overlapping description of elements previously described with reference to FIGS. 5A through 14A and FIGS. 5B through 14B may be omitted. Ex. 1005 ¶ 184 (emphasis added). Patent Owner argues that only the embodiments in Figures 17A–22B describe an etch-stop layer and a barrier layer (as claimed), and that the language cited for a gate-stack-on-top configuration (e.g., Ex. 1005 ¶¶ 90, 91, and 240) is “conspicuously absent from the description of Figures 17A–22B.” PO Resp. 20 (citing Ex. 2009 ¶ 36). However, Figures 17A–22B do not further address the underlying staircase structure that was detailed in the descriptions of the Figures 4 through 15 embodiments. While Figures 17A–22B show a gate-stack-on-bottom configuration, this merely continues the gate-stack-on-bottom illustrations that were used in all of the previous Figures, even for those in which it is undisputed that a gate-stack-on-top configuration is a described alternative. The Figures exemplify rather than limit the description of the gate-stack-on-bottom view in Figures 4–15 and do not exclude the gate-stack on bottom description of the embodiments exemplified by those figures.” slip op. at 17

  Patent outcomesUS 10,672,711 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 10,672,711
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Jan 5, 2026 · IPR2024-00909 · APJ Michael T Cygan · IPR · Final written decision

  Claims 1–7 and 18 are unpatentable as obvious over Toyama, based on the First Exemplary Structure and, for some limitations, the Second Modification.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “B. Level of Ordinary Skill in the Art Petitioner asserts that a person of ordinary skill in the art (“POSITA”) at the critical time “would have had a bachelor of science degree in electrical engineering or a similar discipline, along with 2-3 years of professional experience working with (e.g., researching, designing, or teaching) NAND 2 We apply AIA 35 U.S.C. §§ 102, 103 to the ’378 patent because it was filed after, and never claimed the benefit of an effective filing date before, March 16, 2013. Petitioner also applies AIA §§ 102 and 103. See Pet. 2, 24–26. 3 Neither party presents evidence or arguments regarding objective evidence of non-obviousness. Pet. 104; PO Resp. experience (e.g., an advanced degree may replace some of the professional experience).” Pet. 33 (citing Ex. 1003 ¶¶ 37–39). Petitioner further asserts that a POSITA “would also have been aware of and generally knowledgeable about semiconductor manufacturing and 3D NAND’s structure, its component parts, how it operates, and how it is controlled.” Id. Patent Owner does not object to such a definition. PO Resp. 13. We adopt Petitioner’s proposed level of ordinary skill, as it appears to be consistent with the Specification of the ’378 patent and the prior art of record.” slip op. at 5

  • Claim Construction › Threshold & procedure › Whether a term needs construction (O2 Micro)No construction neededNot reached

    “Petitioner asserts that only the term “a staircase structure in the alternating layer” should be construed, and that the term should be construed as “a staircase structure in the alternating layer stack.” Pet. 32–33. Patent Owner does not dispute this construction, and our determination would be unaffected by Petitioner’s proposed construction. Therefore, we need not provide an express construction of this term. See Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co., 868 F.3d 1013, 1017 (Fed. Cir. 2017) (noting that “we need only construe terms ‘that are in controversy, and only to the extent necessary to resolve the controversy’” (quoting Vivid Techs., Petitioner asserted that all other terms should receive their plain and ordinary meaning. Pet. 33.” slip op. at 6

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITAPlain and ordinary meaningDecided for petitioner

    “Because neither the language of claim 15 nor the Specification indicates a narrower meaning, we agree with Petitioner that the phrase “a substrate with an isolation structure” should be given its plain meaning. Patent Owner argues that the plain meaning of “with” is “having” or “inclusive of.” PO Sur-reply 2 (citing Ex. 1038, 8). Citing the same dictionary, Petitioner argues that the plain meaning of “with” includes objects that are separate. Pet. Reply 3 (stating, “In the sentence ‘Alice went to school with Bob,’ it would be nonsensical to interpret that to mean that Bob is part of Alice.”) (citing Ex. 1038, 7). The cited definition of “with” states that it may indicate “accompaniment,” such as “went there [with] her,” as well as combination (“milk [with] honey”). Ex. 1038, 7. Based on the evidence and arguments presented, we determine that the phrase “a substrate with an isolation structure” should be given its plain meaning, which includes accompaniment (A is accompanied by B) as well as combination (A is part of B, or A and B are a part of C).4” slip op. at 9

  • Obviousness (§103) › Graham factors (scope of art, differences, level of skill)UnpatentableUnpatentable

    “We are persuaded by Petitioner that the lower volume of Toyama’s dielectric fill portion teaches the isolation structure and the upper volume of Toyama’s dielectric fill portion teaches the dielectric structure. First, the structure may be the same material; i.e., SiO2. Ex. 1001, 10:37–40 (isolation structure 233 filled with SiO2), 10:46–47 (dielectric structure can include SiO2, and can include the same material as dielectric layer 230), 10:12–14 (dielectric layer 230 is formed of SiO2). Second, the ’378 patent indicates that the dielectric structure may be “aligned to” and “in contact with” the isolation structure. Id. at 10:30–36. Thus, the two structures of the ’378 patent may appear as two aligned and contacting structures; e.g., a single column of the same material. Third, the ’378 patent specification describes that the dielectric structure and a top portion of the isolation structure may be formed in the same deposition step. When etching the opening 600 that is to be filled with dielectric structure 232, “opening 600 may extend partially into STI structure 233;” i.e., “the etch process used to form opening 600 may also remove (recess) portion of the top surface of STI structure 233.” Id. at 15:12–20; Fig. 6. Then, “opening 600 can be filled with a dielectric layer 702,” which may be the same SiO2 material as the isolation structure, and “[a]s a result, dielectric structure 232 is formed.” Id. at 15:42–54. Thus, the ’378 patent describes a dielectric structure that partially replaces or re-forms, with the same material, its isolation structure. The ’378 patent does not mention whether this results in a dielectric structure that extends into the isolation structure or an isolation structure re-filled to its original height, and it would not appear to matter because both structures may be composed of the same material. The ’378 patent’s indifference to the exact boundary between dielectric structure 232 and isolation structure 233 during formation from the same material indicates that these structures need not be taught by distinct elements. applicable only if the ’378 patent describes that the isolation region and dielectric structure were formed as a single unitary structure. PO Resp. 51; PO Sur-reply 16–18. Retractable Techs. focuses on whether the two elements at issue “could be formed as an integral structure in the first instance,” not whether they were formed integrally. Retractable Techs., 653 F.3d at 1304 (“The specifications further disclose a method to couple the two structures . . . to allow some diffusion or insipient melting to occur where they touch . . . . This passage suggests that [the structures] could be formed as an integral structure in the first instance”). Retractable Techs. looks to whether the specification suggests that the claim terms require separate structures. Powell v. Home Depot U.S.A., Inc., 663 F.3d 1221, 1232 (Fed. Cir. 2011). Patent Owner’s focus on whether the claimed structures were disclosed as being separately formed disregards the issue of whether the separately claimed structures require specific methods of forming those structures. Here, as in Retractable Techs. and Powell, the Specification does not indicate any particular structure or function for the structures that results from their separate steps of deposition. Thus, as held in Retractable Techs. and Powell, the two portions of Toyama “need not be two separate parts” to teach two separate claim limitations. Retractable Techs., 635 F.3d at 1303–04. Consequently, we determine that the claim language does not support a requirement that these structures be separate and distinct. Patent Owner’s further arguments are not availing. Contrary to Patent Owner’s argument, in our “Third” point, supra, we do not state that the isolation structure and the dielectric structure are formed in the same deposition step. PO Resp. 52–53; PO Sur-reply 18; Supra at 34. We only” slip op. at 33

  Patent outcomesUS 10,658,378 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 10,658,378
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Jan 5, 2026 · IPR2024-00788 · APJ Michael T Cygan · IPR · Final written decision

  Claims 15–17, 19, and 20 are unpatentable as obvious over Toyama, Mushiga, and Mushiga with Makala.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “at the critical time “would have had a bachelor of science degree in electrical engineering or a similar discipline, along with 2-3 years of professional experience working with (e.g., researching, designing, or teaching) NAND flash memory devices, or an equivalent level of skill, knowledge, and experience (e.g., an advanced degree may replace some of the professional experience).” Pet. 27 (citing Ex. 1003 ¶¶ 36–37). Petitioner further asserts March 16, 2013. Petitioner also applies AIA §§ 102 and 103. See Pet. 2, 24–26. 3 Neither party presented evidence or arguments regarding objective evidence of non-obviousness during trial. knowledgeable about semiconductor manufacturing and 3D NAND’s structure, its component parts, how it operates, and how it is controlled.” Id. (emphasis omitted). Patent Owner does not object to this assessment. PO Resp. 12. We adopt Petitioner’s proposed level of ordinary skill, as it appears to be consistent with the specification of the ’378 patent and the prior art of record.” slip op. at 5

  • Claim Construction › Threshold & procedure › Whether a term needs construction (O2 Micro)No construction neededNot reached

    “Petitioner does not dispute Patent Owner’s construction, asserting that its grounds render obvious this limitation under Patent Owner’s construction propose construction of the term “through array contact,” which was at issue in the Preliminary Response and in the parallel district court proceeding. Id. Nor have the parties indicated, in response to Board inquiry, that any relevant construction has occurred. See Paper 34. with Petitioner that Patent Owner does not dispute this aspect of the “a dielectric structure on the isolation structure” limitation in Petitioner’s assertions based on Toyama. PO Sur-reply 20–21. Patent Owner does dispute that Mushiga’s insulating spacer 586 is “on” the isolation structure. PO Resp. 70–72. However, because Petitioner relies upon a dielectric structure that includes other portions of Mushiga that Patent Owner does not dispute to be on the asserted isolation structure, the dispute is whether Petitioner is correct to include multiple components as part of a single dielectric structure, and not whether spacer 586 is on an isolation structure. Id. Because Petitioner’s assertions and our determination would be unaffected by its proposed construction, we need not construe this term. See Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co., 868 F.3d 1013, 1017 (Fed. Cir. 2017) (noting that “we need only construe terms ‘that are in controversy, and only to the extent necessary to resolve the controversy’” (quoting Vivid Techs., Inc. v. Am. Sci. & Eng’g, Inc., 200 F.3d 795, 803 (Fed. Cir. 1999))).” slip op. at 7

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITAPlain and ordinary meaningDecided for petitioner

    “Patent Owner’s citations to the Specification do not support its proposed construction. Patent Owner relies on multiple embodiments, only one of which describes a substrate “with” an isolation structure. PO Resp. 21 (citing Ex. 1001, 22:27–28). For example, one of Patent Owner’s cited embodiments recites “on” an isolation region, but Patent Owner specifically argues that the “on” embodiment does not apply to the claimed “with” embodiment. Id. at 22 (denying that “the ‘with’ relationship encompasse[s] the ‘on’ relationship”). Only one of the embodiments cited is clearly within the scope of the “with” claim language, and that embodiment describes no more than the claim language itself. Ex. 1001, 22:27–28. Moreover, Figure 2, cited by Patent Owner, is an illustration “according to some embodiments,” but is not described as depicting all embodiments. Ex. 1001, 3:35–36. These other embodiments need not be included in claim 15’s “with” language because other claims (not at issue in this proceeding) specifically recite language from other embodiments. Ex. 1001, 23:20–21 (“a dielectric structure on an isolation region of the substrate”), 23:58 (“forming an isolation structure on a substrate”). Thus, the specification of the ’378 patent does not limit “a substrate with an isolation structure” in claim 15 to “part of” an isolation structure, such as in a shallow region or other partial-depth portion of the substrate. Because neither the language of claim 15 nor the Specification indicates a narrower meaning, we agree with Petitioner that the phrase “a Patent Owner argues that the plain meaning of “with” is “having” or “inclusive of.” PO Sur-reply 2 (citing Ex. 1038, 7). Citing the same dictionary, Petitioner argues that the plain meaning of “with” includes objects that are separate. Pet. Reply 3 (stating, “In the sentence ‘Alice went to school with Bob,’ it would be nonsensical to interpret that to mean that Bob is part of Alice.”) (citing Ex. 1038, 7). The cited definition of “with” states that it may indicate “accompaniment,” such as “went there [with] her,” as well as combination (“milk [with] honey”). Ex. 1038, 7. Based on the evidence and arguments presented, we determine that the phrase “a substrate with an isolation structure” should be given its plain meaning, which includes accompaniment (A is accompanied by B) as well as combination (A is part of B, or A and B are a part of C).” slip op. at 9

  • Obviousness (§103) › Graham factors (scope of art, differences, level of skill)UnpatentableUnpatentable

    “We are persuaded by Petitioner that the lower volume of Toyama’s dielectric fill portion teaches the isolation structure and the upper volume of Toyama’s dielectric fill portion teaches the dielectric structure. First, the ’378 patent indicates that both the dielectric structure and the isolation structure may be the same material; i.e., SiO2. Ex. 1001, 10:37–40 (isolation structure 233 filled with SiO2), 10:46–47 (dielectric structure can include SiO2, and can include the same material as dielectric layer 230), 10:12–14 (dielectric layer 230 is formed of SiO2). Second, the ’378 patent indicates that the dielectric structure may be “aligned to” and “in contact with” the isolation structure. Id. at 10:30–36. Thus, the two structures of the ’378 patent may appear as two aligned and contacting structures; e.g., a single column, of the same material. Third, the ’378 patent specification describes that the dielectric structure and a top portion of the isolation structure may be formed in the same deposition step. When etching the opening 600 that is to be filled with dielectric structure 232, “opening 600 may extend partially into STI structure 233;” i.e., “the etch process used to form opening 600 may also remove (recess) portion of the top surface of STI structure 233.” Id. at 15:12–20. Then, “opening 600 can be filled with a dielectric layer 702,” which may be the same SiO2 material as the isolation structure, and “[a]s a result, dielectric structure 232 is formed.” Id. at 15:42–54. Thus, the ’378 patent describes a dielectric structure that partially replaces or re-forms, with the same material, its isolation structure. The ’378 patent does not mention whether this results in a dielectric structure that extends into the isolation structure or an isolation structure re-filled to its original height, and it would material. The ’378 patent’s indifference to the exact boundary between dielectric structure 232 and isolation structure 233 during formation from the same material indicates that these need not be taught by distinct elements. We do not agree with Patent Owner that Retractable Techs. is applicable only if the ’378 patent describes that the isolation region and dielectric structure were formed as a single unitary structure. PO Resp. 50; PO Sur-reply 9. Retractable Techs. focuses on whether the two elements at issue “could be formed as an integral structure in the first instance,” not whether they were formed integrally. Retractable Techs., 653 F.3d at 1304. (“The specifications further disclose a method to couple the two structures . . . to allow some diffusion or insipient melting to occur where they touch . . . . This passage suggests that [the structures] could be formed as an integral structure in the first instance”). Retractable Techs. looks to whether the specification suggests that the claim terms require separate structures. Powell v. Home Depot U.S.A., Inc., 663 F.3d 1221, 1232 (Fed. Cir. 2011). Patent Owner’s focus on whether the claimed structures were disclosed as being separately formed disregards the issue of whether the separately claimed structures require specific methods of forming those structures. Here, as in Retractable Techs. and Powell, the Specification does not indicate any particular structure or function for the structures that results from their separate steps of deposition. Thus, as held in Retractable Techs. and Powell, the two portions of Toyama “need not be two separate parts” to teach two separate claim limitations. Retractable Techs., 635 F.3d at 1303– 04. Consequently, we determine that the claim language does not support a requirement that these structures be separate and distinct.” slip op. at 32

  Patent outcomesUS 10,658,378 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 10,658,378
• Micron Technology, Inc. v. Yangtze Memory Techonologies Company, Ltd.All claims unpatentable
  PTAB · Oct 23, 2025 · IPR2024-00789 · APJ Jo-Anne M Kokoski · IPR · Final written decision

  Claims 1–6 and 11–13 are unpatentable as obvious over Tessariol; Petitioner did not show claims 1–6, 11, and 13 obvious over Park.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “(“POSITA”) would have had “a bachelor of science degree in electrical engineering or a similar discipline” with “2–3 years of professional experience working with (e.g., researching, designing, or teaching) monolithic 3D structures and NAND memory devices,” or “an equivalent level of skill, knowledge, and experience (e.g., an advanced degree may replace some of the professional experience).” Pet. 33. Petitioner further contends that a “POSITA would have been aware of and generally knowledgeable about 3D NAND’s structure, how it is manufactured, and its component parts.” Id. (citing Ex. 1003 ¶¶ 40–43). Patent Owner states that it does not object to the definition of a POSITA proffered by Petitioner. PO Resp. 13 (citing Pet. 33). In the Institution Decision, we adopted the assessment offered by Petitioner. Dec. 5–6. Because Petitioner’s definition of the level of skill in the art is consistent with the ’872 patent and the asserted prior art, we maintain it for purposes of this Final Written Decision. See Okajima v. Bourdeau, 261 F.3d 1350, 1355 (Fed. Cir 2001).” slip op. at 6

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITATerm construed patent owner constructionDecided for patent owner

    “Read as a whole, the Specification supports the conclusion that a “dummy source structure” does not function as a source for the memory cells. Dummy source structures are variously described as being (1) electrically separated from the conductive layers of the memory stack, (2) used to laterally separate 3D memory device 100 into multiple memory regions, (3) used as a mechanical support structure, and (4) used as an interconnect to peripheral devices. None of these functions are directed to sourcing the memory cells. Moreover, the Specification describes a “source structure” as being connected with a channel structure of a memory string via a common source, such as a doped region in the substrate. That a dummy source structure does not function as a source to the memory cells is consistent with this description of source structure.” slip op. at 11

  • Obviousness (§103) › Graham factors (scope of art, differences, level of skill)UnpatentableUnpatentable

    “After considering the complete record, we are persuaded that Petitioner sufficiently establishes that Tessariol teaches “at least two of the plurality of dummy source structures are of nominally equal lateral distances to the staircase contact” and “the plurality of dummy source structures are of nominally equal lateral distances to the staircase contact” as recited in claims 3 and 4. As an initial matter, we note that the ’872 patent defines “nominal/nominally” as follows: As used herein, the term “nominal/nominally” refers to a desired, or target, value of a characteristic or parameter for a component or a process operation, set during the design phase of a product or a process, together with a range of values above and/or below the desired value. The range of values can be due to slight variations in manufacturing, processes or tolerances. Ex. 1001, 4:9–15. Referring to Figure 1A, the ’872 patent also teaches that “[t]he four dummy source structures indicated by 146 may be spaced with nominally equal lateral distances to staircase contact 122. In other words, the four dummy source structures indicated by 146 may be evenly or Accordingly, we understand “nominally equal lateral distances” as used in claims 3 and 4 to include evenly or uniformly distributed structures. See Ex. 1003 ¶ 162 (Dr. Banerjee testifying that “[n]ominally lateral distances to, in the context of the ’872 Patent, includes being ‘evenly or uniformly distributed.’”). Tessariol’s Figure 15 illustrates that dummy structures 60 are evenly distributed around operating conductive vias 80. Ex. 1006, Fig. 15. The figure is consistent with Tessariol’s teaching that dummy-structure openings 56 (which become dummy structures 60) are “collectively arrayed in straight-line rows and columns” and “any alternate configuration may be used including, for example, staggering . . . alternating openings 54/56 in rows and/or columns.” Id. ¶ 37. We also credit Dr. Banerjee’s testimony that “it is best practice to use repeating patterns in semiconductive designs” and “a POSITA viewing the Tessariol figures would immediately interpret the figures to include this repeating pattern, in which these objects are of equal distance from the contact.” Ex. 1035 ¶ 85. We disagree with Patent Owner that Tessariol’s Figure 15 is insufficient to show that the dummy source structures are of nominally equal lateral distances to the staircase contact. The Federal Circuit has held that “the speculative modeling premised on unstated assumptions in prior art patent drawings cannot be the basis for challenging the validity of claims reciting specific dimensions not disclosed directly in such prior art.” Nystrom v. TREX Co., 424 F.3d 1136, 1148 (Fed. Cir. 2005) (emphasis added). Here, claims 3 and 4 recite relative positioning (“nominally equal lateral distances”), not specific dimensions or proportions. Accordingly, we find Petitioner’s reliance on Tessariol’s Figure 15 to establish the placement particularly given Dr. Banerjee’s credible testimony regarding best practices in semiconductor design and that a POSITA viewing the Tessariol figures would have understood the objects are of equal distance from the contact. See Ex. 1035 ¶ 85. Based on our consideration of the entire record, and for the reasons set forth above, we determine that Petitioner shows, by a preponderance of the evidence, that claims 3 and 4 would have been obvious over the teachings of Tessariol.” slip op. at 27

  • Expert testimonyPetitioner expert discountedDecided for patent owner

    “Petitioner’s and Dr. Banerjee’s arguments are not persuasive. The arguments are circular as they assert that a POSITA would have understood that dummy source structure must have a complete path (i.e., not have a partial path, or dead-end) like a source structure because the source structure must have a complete path. See, e.g., Ex. 1035 ¶ 50. Similarly, the argument that the ’872 patent’s use of “connect” can only refer to an electrical connection between dummy source structure 246 and the channel structures is based on a figure depicting a source line as having an electrical connection and Dr. Banerjee’s unsupported assertion that the source line is a dummy source line (in some embodiments). Pet. Reply 9; Ex. 1035 ¶ 50. Again, Dr. Banerjee’s evidence is circular as it asserts the dummy source structure must have a complete path because the figure depicts a source line having a complete path, and therefore dummy source lines (in some embodiments) must have a complete path. Id. To the extent Dr. Banerjee asserts that it was “well known” that dummy source structures function as sources or source structures, any such assertion is not credible in light of his testimony that he had never heard of dummy source structures. See Ex. 1035 ¶¶ 17 (stating he “never heard of ‘dummy source structure’ before reading the ’872 patent”), 50 (stating “how these dummy source and source structures function as sources . . . was well known”). Thus, Petitioner’s assertion that the ’872 patent teaches a dummy source structure may connect to channel structures in the inner region is insufficient to show that the dummy source structure acts as a source to the memory cells.” slip op. at 14

  Patent outcomesUS 10,861,872 unpatentable
  Claim construction§ 103 obviousnesscites Phillips
  Patents in suitUS 10,861,872
• Micron Technology, Inc. v. Yangtze Memory Technologies Company, Ltd.All claims unpatentable
  PTAB · Oct 7, 2025 · IPR2024-00795 · APJ Michael T Cygan · IPR · Final written decision

  Claims 1–9 and 11–19 are unpatentable as obvious over Lee or Zhao and Lee; the Board did not find claims unpatentable over Zhao or Yang alone.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “B. Level of Ordinary Skill in the Art Petitioner asserts that a person of ordinary skill in the art (“POSITA”) at the critical time would have had a bachelor’s degree in electrical engineering or a similar discipline, along with 2-3 years of professional experience working with (e.g., researching, designing, or teaching) NAND memory devices (including issues relating to the operation, e.g., programming, of said devices), or an equivalent level of skill, knowledge, and experience (e.g., an advanced degree may replace some of the professional experience). Pet. 18 (citing Ex. 1003 ¶¶ 35–38). Petitioner further asserts that a POSITA “would have been aware of and generally knowledgeable about NAND memory’s structure, its component parts, how it operates, and how it is controlled. Id. (citing Ex. 1003 ¶ 38). Patent Owner does not object to this assertion. PO Resp. 12. We adopt Petitioner’s proposed level of ordinary skill, as it appears to be consistent with the specification of the ’822 patent and the prior art of record.” slip op. at 6

  • Claim Construction › Threshold & procedure › Whether a term needs construction (O2 Micro)No construction neededNot reached

    “1. Word line pre-pulse signal Patent Owner argues that such a signal “must increase in value and then decrease in value (or vice versa).” PO Resp. 13; PO Sur-Reply 1. Petitioner agrees with this construction. Pet. Reply. 3. Patent Owner further argues that the pre-pulse signal “prepares the word line before the programming step.” PO Resp. 13. We agree that Petitioner applies its teachings with the same understanding of “pre-pulse signal” as Patent Owner. See, e.g., Pet. 38–39 (asserting that Lee teaches, or that that Lee would make obvious, pre-bias signals applied as pulses). Because both parties agree that a pre-pulse signal “must increase in value and then decrease in value (or vice versa),” and apply this construction in their assertions and arguments, no dispute as to the meaning of this phrase exists in a manner that would affect the outcome of this decision. Therefore, we do not need to determine a particular construction. Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co., 868 F.3d 1013, 1017 (Fed. Cir. 2017) (“[W]e need only construe terms ‘that are in controversy, and only to the extent necessary to resolve the controversy.’” (quoting Vivid Techs., Inc. v. Am. Sci & Eng'g, Inc., 200 F.3d 795, 803 (Fed. Cir. 1999))).” slip op. at 7

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITATerm construed patent owner constructionDecided for patent owner

    “with the plain language of the claims, each claim states “disposed.” Patent Owner provides dictionary definitions for “disposed,” which is described as a verb. See, e.g., Ex. 2016, 3. When described as a verb in these definitions, “disposed” is the action of the actor; i.e., “the chief disposed his attendants in a circle” (Ex. 2019, 3); “She disposed of her estate among her heirs” (Ex. 2018, 3); “disposed of the matter efficiently” (Ex. 2017, 3); “troops disposed for withdrawal” (Ex. 2016, 3). Petitioner offers no contrary definition from either the Specification or any extrinsic source for that term. We agree with Patent Owner’s construction of “disposed” as “put in place” or “arranged in a particular position.” Nevertheless, the construction of “disposed” does not resolve the controversy over the language of claims 2, 3, 12, and 13. The claims recite “are disposed.” For example, claim 2 recites, “wherein the [first through third groups] of the plurality of word lines are disposed in an order of distance from the selected word line.” Under Patent Owner’s construction, this reads as, “wherein the [first through third groups] of the plurality of word lines are arranged in a particular position in an order of distance from the selected word line.” But claim 2 does not recite that the word lines are arranged “based on” the selected word line, or that the arrangement occurs only after a word line is selected, as argued by Patent Owner. We agree with Petitioner that the express language of claim 2 does not recite any limitation as to how or when the groups of word lines are disposed. Both parties point to the same language in the ’822 patent Specification in support of their position: “the word lines disposed between the selected word line and the top select gate TSG can be divided into multiple groups of the word lines.” PO Sur-Reply 2 (citing Pet. Reply 11 requires the recited arrangement to exist, at some point. But we determine that none of claims 2, 3, 12, or 13 require a step of arrangement, or an action to change the arrangement of grouped word lines.” slip op. at 9

  • Obviousness (§103) › Motivation to combine / reasonable expectation of successMotivation foundUnpatentableUnpatentable

    “not based on the location of the source or bit lines. Instead, Petitioner relies upon the distance from the selected word line and the drain-side of the string. See Pet. 66 (“the channel length between the drain-side of the string and word line selected for programming would be quite long, resulting in a relatively high channel resistance” (citing Ex. 1003 ¶ 360)). Petitioner asserts that Lee’s application of higher pre-charge voltages to the drain-side word lines “offset the channel resistance effect.” Id. (citing Ex. 1003 ¶ 361). Lee and Zhao both admittedly have “typical memory strings, which are a ‘vertical column’ of memory cells arranged in series between a source side select transistor and a drain side transistor.” PO Resp. 53 (emphasis omitted). Petitioner asserts that applying pre-charging to mitigate program disturb (sought by both Lee and Zhao) relies on the creation of a potential difference to facilitate electron redistribution. Pet. Reply 17–18 (citing Ex. 1004, 1:52–56; Ex. 1005, 17:4–12; Ex. 1021 ¶¶ 72–78). Petitioner asserts that the application of voltage can be performed from either end of the channel so long as it targets the portion of the channel desired to be pre- charged. Id. at 18 (citing Ex. 1021 ¶¶ 77–78; Ex. 1010, 17:16–23). Although Patent Owner points to Yang as showing different “biasing schemes” based upon whether the bit line, source line, or both are used for pre-charging, each of the cited Figures 8–10 of Yang indicates that Vbypass (Yang’s uncontested pre-pulse signal) is applied to at least some word lines between the selected word line and the drain-side SGD0. Ex. 1010, Figs. 8C, 9C, 10C; see PO Resp. 25–28 (“a ‘bypass voltage’ (‘Vbypass’) is applied to ‘not yet programmed’ memory cells during the ‘pre-charge phase’” (citing Fig. 8C) (emphasis omitted)). We do not discern in Patent Owner’s arguments, or in the evidence provided during trial, sufficient reasons why applying voltage from either source or bit line disturbs Petitioner’s asserted advantage of offsetting the resistance of the channel between a selected word line and the drain side of the string. Patent Owner further argues that Lee discusses a “wholly disparate approach” for mitigating program disturb than Zhao and that a POSITA would not have been motivated to apply Lee’s teaching to Zhao. PO Resp. 56–58. Patent Owner contends that because Zhao does not conduct current when applying its bypass voltage to equalize charges, but Lee does conduct current when doing so, Lee need only compensate for insufficient charge boosting due to the increased resistance component between source and drain and does not need to compensate for “resistance” effects creating voltage differences along the length of the memory string channel. Id. at 56. Dr. Przybylski’s supporting testimony is based upon such differences in the resistance components. See, e.g., Ex. 2011 ¶ 128. However, we have credited Dr. Liu’s testimony that a chain of transistors in both systems creates a resistance effect regardless of current flow in the steady state. Supra § II.F.1.b.2. We further agree with Petitioner that applying pre- on the creation of a potential difference to facilitate electron redistribution. Pet. Reply 17–18 (citing Ex. 1004, 1:52–56; Ex. 1005, 17:4–12; Ex. 1021 ¶¶ 72–78). We further credit Dr. Liu’s testimony that Zhao’s use of the same pre-charge voltages to not-yet-programmed word lines presents an issue of inadequate pre-charging that Lee addresses. Ex. 1021 ¶¶ 55–56; Pet. Reply 22–23. Consequently, we are persuaded by Petitioner that the chain resistance effects in Zhao and Lee permit the application of Lee’s method of pre-charging to mitigate program disturb to be applicable and desirable in Zhao’s method of applying pre-charging to mitigate program disturb. Consequently, we determine that Petitioner has shown persuasive motivation for its combination.” slip op. at 45

  Patent outcomesUS 11,501,822 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 11,501,822
• Innoscience (Zhuhai) Technology Company, Ltd. / Innoscience America, Inc. v. Efficient Power Conversion CorporationAll claims unpatentable
  PTAB · Mar 25, 2025 · IPR2023-01384 · APJ Jeffrey W Abraham · IPR · Final written decision

  Claims 1–7 are unpatentable as obvious over Yoshida and Saxler; the Board did not reach the alternative grounds.

  RulingsFinal written decision

  • Skill levelOther

    “In light of the record before us, we determine that we do not need to reach a specific finding regarding the level of ordinary skill in the art. See Okajima v. Bourdeau, 261 F.3d 1350, 1355 (Fed. Cir. 2001) (explaining that specific findings regarding ordinary skill level are not required “where the prior art itself reflects an appropriate level and a need for testimony is not shown”) (quoting Litton Indus. Prods., Inc. v. Solid State Sys. Corp., 755 F.2d 158, 163 (Fed. Cir. 1985)).” slip op. at 13

  • Claim Construction › Threshold & procedure › Whether a term needs construction (O2 Micro)No construction neededDecided for petitioner

    “In the Institution Decision, we declined to adopt Petitioner’s proposed construction of the “side surfaces” limitation and determined that it was not necessary to further construe this term because “[t]he parties do not dispute that the language ‘side surfaces extending horizontally’ encompasses a gate material with sloped side surfaces as depicted in Figure 5 of the ’335 patent.” Inst. Dec. 11–16 (citing Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co., 868 F.3d 1013, 1017 (Fed. Cir. 2017); Vivid Techs., Inc. v. Am. Sci. & Eng’g, Inc., 200 F.3d 795, 803 (Fed. Cir. 1999) (“[O]nly those terms need be construed that are in controversy, and only to the extent necessary to resolve the controversy.”)). We invited the parties to address this limitation further during the course of this trial, but neither party provided additional evidence or argument regarding the “side surfaces” limitation. Inst. Dec. 16; see generally PO Resp.; Reply; Sur-reply. Accordingly, we maintain our determination from the Institution Decision that we do not need to construe the “side surfaces” limitation. Inst. Dec. 15– 16.” slip op. at 14

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITATerm construed petitioner constructionDecided for petitioner

    “This evidence, particularly the language in the ’335 patent itself, undermines Patent Owner’s argument that “[t]he process for forming gate ledges using separate masks instead of the self-aligned process disclosed in the ’335 patent cannot produce ledges that are ‘substantially symmetric.’” PO Resp. 39 (emphasis added); see also PO Resp. 42–43 (arguing that a gate structure with ledges having substantially equal widths is “not achievable” without using a single photo-mask process). We have considered the evidence presented by Patent Owner and Dr. Schubert in support of Patent Owner’s arguments. PO Resp. 38–43; Ex. 2005 ¶¶ 49–51. We, however, are unable to discern sufficient evidence supporting a conclusion that using separate masks cannot produce ledges that are substantially symmetric, particularly when the ’335 patent suggests otherwise. See Ex. 1001, 4:60– 63 (referring only to the “possibility of misalignment”). Even if, as Patent Owner and Dr. Schubert contend, misalignment “naturally” occurs when using a two-mask process, that does not foreclose the possibility that the” slip op. at 18

  • Obviousness (§103) › Motivation to combine / reasonable expectation of success › Teaching awayTeaching away not foundDecided for petitioner

    “It is well settled that “[a] reference does not teach away . . . if it merely expresses a general preference for an alternative invention but does not ‘criticize, discredit or otherwise discourage’ investigation into the invention claimed.” DePuy Spine, Inc. v. Medtronic Sofamor Danek, Inc., 567 F.3d 1314, 1327 (Fed. Cir. 2009) (quoting In re Fulton, 391 F.3d 1195, 1201 (Fed. Cir. 2004)). Furthermore, “teaching that a composition may be optimal or standard does not criticize, discredit, or otherwise discourage” slip op. at 31

  Patent outcomesUS 10,312,335 unpatentable
  Claim construction§ 103 obviousnesscites Phillips · KSR · Graham
  Patents in suitUS 10,312,335
• Innoscience (Zhuhai) Technology Company, Ltd / Innoscience America, Inc. v. Efficient Power Conversion CorporationAll claims unpatentable
  PTAB · Mar 18, 2025 · IPR2023-01381 · APJ Jon B Tornquist · IPR · Final written decision

  Claims 1–3 and 7–9 are unpatentable as obvious over Uemoto and Smith; the motion to amend is granted, and proposed substitute claims 13 and 14 are not shown unpatentable.

  RulingsFinal written decision

  • Skill levelSkill level petitioner adoptedDecided for petitioner

    “In order to determine whether an invention would have been obvious at the time the application was filed, we consider the level of ordinary skill in the pertinent art. Graham, 383 U.S. at 17. In assessing the level of ordinary skill in the art, various factors may be considered, including the “type of problems encountered in the art; prior art solutions to those problems; rapidity with which innovations are made; sophistication of the technology; and educational level of active workers in the field.” In re GPAC, Inc., 57 F.3d 1573, 1579 (Fed. Cir. 1995) (quotation omitted). Petitioner contends a person of ordinary skill in the art “would have possessed at least a four-year degree in electrical engineering, chemical engineering, physics, or material science, or a closely related field, and at least two years of experience in semiconductor device design or fabrication, including the processing of semiconductor materials, analysis of device operation, or the development of new device topologies.” Pet. 5–6. Petitioner contends “[a]dditional education could substitute for professional experience and vice versa.” Id. at 6. Patent Owner contends that a person of ordinary skill in the art would have had “at least a four-year degree in electrical engineering, physics, material science, or a closely related field, and three years of professional work experience in the epitaxial growth, design, and fabrication of semiconductor electronic devices, including those of GaN.” PO Resp. 7 (citing Ex. 2009 ¶ 82). Upon review of the evidence of record and the parties’ arguments, we adopt Petitioner’s definition of the person of ordinary skill in the art as it is consistent with the prior art of record. See Okajima v. Bourdeau, 261 F.3d 1350, 1355 (Fed. Cir. 2001) (holding that the prior art itself can reflect the appropriate level of ordinary skill in the art). We note, however, that the conclusions reached in this Decision would be the same under either proposed definition of the ordinarily skilled artisan. See Ex. 2009 ¶ 83 (Dr. Schubert testifying that his opinions would be the same under either proposed definition); Ex. 1033 ¶ 9 (Dr. Shealy testifying that the differences in proposed definitions of the ordinarily skilled artisan “would not change the outcome of the invalidity analysis in any material manner”); PO Resp. 7; Pet. Reply 1.” slip op. at 9

  • Claim Construction › Intrinsic evidence (Phillips canons) › Plain and ordinary meaning to a POSITATerm construed board ownDecided for patent owner

    “compensated GaN layer above the barrier layer, and a gate contact above the compensated GaN layer.” Ex. 1001, 5:12–18. Petitioner contends the term “compensated” indicates that the step of compensating the GaN layer has already occurred, such that the term “compensated GaN layer” should be construed as a “‘[d]oped GaN layer formed with a step to passivate its impurities’ which is a ‘product-by-process’ limitation.”5 Pet. 12–14. And, because compensation with hydrogen was the “critical step” distinguishing the claims from the prior art, and because hydrogenation in as-grown III-nitride materials had been well known for over a decade by 2009, Petitioner contends “compensated” “cannot be interpreted as mere hydrogen presence in as-grown material, a well-known property of doped GaN.” Id. at 15. Patent Owner contends “compensated GaN material” should be construed as “a semiconductor GaN gate material in which one type of impurity (for example, donor) cancels the electrical effects of the other type of impurity (for example, acceptor).” PO Resp. 11 (citing Ex. 2009 ¶ 92) (emphasis added). Patent Owner contends this construction is consistent with the IEEE dictionary, which defines “compensated semiconductor” as 5 Given that product-by-process steps in a device claim are not entitled to patentable weight, Petitioner contends “the prior art only need show a material with passivated impurities to show unpatentability, not the step to achieve it.” Pet. 15–16. “[a] semiconductor in which one type of impurity or imperfection (for example, donor) partially cancels the electric effects of the other type of impurity or imperfection (for example, acceptor).” PO Resp. 14 (quoting Ex. 2004). Patent Owner contends its construction is also consistent with the written description of the ’294 patent, which explains that a compensated GaN material is part of the gate and includes a p-type impurity that imparts an electrical effect (i.e., conductivity), as well as a second impurity, e.g., hydrogen, that partially cancels the electrical effect of the p-type impurity, rendering the layer semi-insulating. Id. at 14–15 (citing Ex. 1001, 3:10–13, 3:43–45). On this record, we construe “compensated GaN layer” as “a GaN layer in which one type of impurity (for example, donor) partially cancels the electric effects of the other type of impurity (for example, acceptor).” This is consistent with the disclosures of the ’294 patent, the IEEE dictionary definition, and the construction ultimately adopted by the ITC. Ex. 2004, 3; Ex. 1049, 16–17 (ITC construing “compensated GaN layer” to mean “a GaN layer in which one type of impurity partially cancels the electrical effects of another type of impurity”); Ex. 1001, 3:43–45 (explaining that the compensated GaN layer of the ’294 patent is formed through the “passivation of a p-type impurity using hydrogen”). For the reasons set forth below, however, we decline to construe “compensated GaN layer” as a product-by-process claim term (as asserted by Petitioner), or to limit the compensated GaN layer to a gate material (as asserted by Patent Owner).” slip op. at 11

  • Claim Construction › Intrinsic evidence (Phillips canons) › Specification disavowal / 'present invention' languageDisclaimer not foundDecided for petitioner

    “There are two exceptions to the general rule that we apply the ordinary and customary meaning of a claim term: (1) when a patentee sets out a definition and acts as his own lexicographer, or (2) when the patentee disavows the full scope of a claim term either in the specification or during prosecution. See Thorner, 669 F.3d at 1365. The standards for lexicography and disclaimer, however, are “exacting.” Id. at 1366. There is no argument that the patentees acted as their own lexicographer to redefine the term “compensated GaN layer.” With respect to disavowal, a “patentee may demonstrate intent to deviate from the ordinary and accustomed meaning of a claim term by including in the specification expressions of manifest exclusion or restriction, representing a clear disavowal of claim scope.” Thorner, 669 F.3d at 1366 (quoting Teleflex, Inc. v. Ficosa N. Am. Corp., 299 F.3d 1313, 1325 (Fed. Cir. 2002)). As noted by Patent Owner, the title of the ’294 patent is, in part, “Compensated Gate MISFET” and much of the discussion of the ’294 patent is of a compensated GaN layer that is directly below the gate contact and above a barrier layer and operates in conjunction with the gate contact to control the on/off state of the transistor. PO Resp. 12–14. We are presented with insufficient argument or evidence to conclude, however, that these disclosures rise to the level of a disclaimer. For example, although the title of the ’294 patent is directed to a “Compensated Gate MISFET,” claim 1 is more broadly directed to “[a] column III Nitride transistor.” Ex. 1001, 5:12, code (54). Nor are we directed to an expression or statement of manifest exclusion in the ’294 patent that would serve to disclaim any “compensated GaN layer” that is not directly below the gate and/or that does not function in concert with the gate electrode to control the on/off state of the transistor. See Thorner, 669 F.3d at 1366. With respect to the stated goals of the invention, as noted by Patent Owner, one of the primary purposes of the compensated GaN layer of the ’294 patent is to reduce gate leakage and gate capacitance. Ex. 1001, 2:13– 19, 3:18–21 (“[U]sing a compensated semiconductor layer 38 leads to low gate leakage during device operation.”). We cannot use the goals of the invention, however, to rewrite the claims or insert terms that are not present. See Thorner, 669 F.3d at 1366. Moreover, the prior art of record indicates that a compensated GaN layer that is below the gate contact and above a barrier layer, but not part of the active gate structure, may also “decrease the leakage current between the gate and the drain.” Ex. 1006 ¶¶ 44 (“Even when a positive bias of 5 V or higher is applied to the gate electrode, no significant gate-leakage current is observed.”), 61. As such, evidence of record suggests that a person of ordinary skill in the art would have understood that one of the primary goals disclosed in the ’294 patent is achieved regardless of whether the compensated GaN layer is part of the gate, or simply in close vicinity to the gate. In view of the foregoing, we are not persuaded that the written description of the ’294 patent indicates that the “compensated GaN layer” must be part of the gate structure.” slip op. at 17

  • Obviousness (§103) › Objective indicia / secondary considerations › NexusObjective indicia no nexusDecided for petitioner

    “To be probative, Patent Owner must prove there is a nexus between the presented evidence and the merits of the claimed invention. See Demaco Corp. v. F. Von Langsdorff Licensing Ltd., 851 F.2d 1387, 1392 (Fed. Cir. 1988). A rebuttable presumption of nexus applies when the “patentee shows that the asserted evidence is tied to a specific product and that the product ‘is the invention disclosed and claimed.’” Fox Factory, Inc. v. SRAM, LLC, 944 F.3d 1366, 1373 (Fed. Cir. 2019) (quoting Demaco, 851 F.2d at 1392). “That is, presuming nexus is appropriate ‘when the patentee shows that the asserted objective evidence is tied to a specific product and that product embodies the claimed features, and is coextensive with them.’” Id. (quoting Polaris Indus., Inc. v. Arctic Cat, Inc., 882 F.3d 1056, 1072 (Fed. Cir. 2018)). If the praise is not limited to the features of the claimed invention, the patent owner may still prove nexus “by showing that the evidence of secondary considerations is the ‘direct result of the unique characteristics of the claimed invention.’” Id. at 1373–74 (quoting In re Huang, 100 F.3d 135, 140 (Fed. Cir. 1996)). Patent Owner contends that the compensated gate of the ’294 patent “was a breakthrough invention and resulted in the first commercially viable enhancement-mode GaN transistor.” PO Resp. 60 (citing Ex. 2009 ¶¶ 192– 193, 197; Ex. 2021). Patent Owner further contends that this achievement required the counter-intuitive use of a compensated gate material in the gate structure, and represented “a technological leap that laid the foundation for viable enhancement-mode GaN transistors.” Id. at 61–62. For this achievement, Patent Owner contends the inventor, Dr. Alex Lidow, received the 2015 SEMI Award. Id. at 60 (citing Ex. 2021). Upon review of Patent Owner’s evidence and the parties’ arguments, we find that Patent Owner’s objective indicia evidence is entitled to little, if any, weight. The evidence of praise relied upon by Patent Owner is not clearly linked to the claimed invention or any particular product having each of the claimed features of the ’294 patent. Ex. 2021. For example, the 2015 SEMI award was provided to Dr. Lidow “for commercialization of GaN power devices.” Id. An article explaining the award indicates that “high cost” previously “limited [the] commercial success” of GaN technologies, but Dr. Lidow was able to overcome these issues, “from resolving packaging limitations to establishing a low-cost supply chain,” “through persistence.” Id. This praise is not demonstrably linked to the claimed invention or any particular device, and does not mention the use of a compensated gate, or any other relevant feature recited in the claims. In view of the foregoing, we determine that Patent Owner’s objective evidence of non-obviousness is entitled to little, if any, weight.” slip op. at 20

  Patent outcomesUS 8,350,294 unpatentable
  Claim construction§ 103 obviousness§ 112 disclosurecites KSR · Graham
  Patents in suitUS 8,350,294

Holdings, summaries, rulings, issues, outcomes, winners and claim constructions shown for a decision were generated by a large language model reading the opinion. They are a guide to the decision, not the decision. Confirm every one against the court's own text before relying on it. Outcomes read from the patent owner’s side. Party names are extracted from the decision and are missing on about 900 short Director denials and scans, which carry the trial number instead.